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Cited 19 time in webofscience Cited 22 time in scopus
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dc.contributor.authorPark, SH-
dc.contributor.authorKim, KB-
dc.contributor.authorSeo, SY-
dc.contributor.authorKim, SH-
dc.contributor.authorHan, SW-
dc.date.accessioned2016-04-01T09:10:47Z-
dc.date.available2016-04-01T09:10:47Z-
dc.date.created2009-03-05-
dc.date.issued2006-08-
dc.identifier.issn0361-5235-
dc.identifier.other2006-OAK-0000010670-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/29598-
dc.description.abstractWe present the structural and optical properties of Zn1-xMgxO thin films studied using x-ray diffraction (XRD), extended x-ray absorption fine structure (EXAFS), and photoluminescence (PL) measurements. The Zn1-xMgxO films on sapphire [00011 substrates were fabricated with metal organic chemical vapor deposition (MOCVD). The XRD measurements showed that the Zn1-xMgxO films (x <= 0.05) had a wurtzite structure without any MgO phase and were epitaxially grown along the c-axis of the Al2O3 substrate. The lattice constant of the Zn0.95Mg0.05O film shrank by 0.023 angstrom, compared with that of ZnO crystals. From the EXAFS measurements on the Zn1-xMgxO films at Zn K-edge, we found a substantial amount of distortion in the bond length of Zn-Zn pairs with a small amount of Mg substitution on the Zn site. The PL measurements showed a gradual increment of the main exciton transitions from 3.36 eV (x = 0.0) to 3.57 eV (x = 0.05) at 10 K. We also observed a strong deep-level emission near 2.3 eV from the specimen with x = 0.05.-
dc.description.statementofresponsibilityX-
dc.languageEnglish-
dc.publisherMINERALS METALS MATERIALS SOC-
dc.relation.isPartOfJOURNAL OF ELECTRONIC MATERIALS-
dc.subjectmetal organic chemical vapor deposition (MOCVD)-
dc.subjectextended x-ray absorption fine structure (EXAFS)-
dc.subjectphotoluminescence (PL)-
dc.subjectbandgap-
dc.subjectfilm-
dc.subjectnanorod-
dc.subjectZnO-
dc.subjectZnMgO-
dc.subjectABSORPTION FINE-STRUCTURE-
dc.subjectZNO-
dc.subjectMGXZN1-XO-
dc.subjectEMISSION-
dc.subjectLAYERS-
dc.subjectEDGE-
dc.titleStructural and optical properties of Zn1-xMgxO thin films synthesized with metal organic chemical vapor deposition-
dc.typeArticle-
dc.contributor.college신소재공학과-
dc.identifier.doi10.1007/s11664-006-0217-7-
dc.author.googlePark, SH-
dc.author.googleKim, KB-
dc.author.googleSeo, SY-
dc.author.googleKim, SH-
dc.author.googleHan, SW-
dc.relation.volume35-
dc.relation.issue8-
dc.relation.startpage1680-
dc.relation.lastpage1684-
dc.contributor.id10077433-
dc.relation.journalJOURNAL OF ELECTRONIC MATERIALS-
dc.relation.indexSCI급, SCOPUS 등재논문-
dc.collections.nameJournal Papers-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF ELECTRONIC MATERIALS, v.35, no.8, pp.1680 - 1684-
dc.identifier.wosid000240072400013-
dc.date.tcdate2019-02-01-
dc.citation.endPage1684-
dc.citation.number8-
dc.citation.startPage1680-
dc.citation.titleJOURNAL OF ELECTRONIC MATERIALS-
dc.citation.volume35-
dc.contributor.affiliatedAuthorKim, SH-
dc.identifier.scopusid2-s2.0-33748684805-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc17-
dc.type.docTypeArticle-
dc.subject.keywordPlusZNO-
dc.subject.keywordPlusMGXZN1-XO-
dc.subject.keywordPlusEMISSION-
dc.subject.keywordPlusEDGE-
dc.subject.keywordAuthormetal organic chemical vapor deposition (MOCVD)-
dc.subject.keywordAuthorextended x-ray absorption fine structure (EXAFS)-
dc.subject.keywordAuthorphotoluminescence (PL)-
dc.subject.keywordAuthorbandgap-
dc.subject.keywordAuthorfilm-
dc.subject.keywordAuthornanorod-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthorZnMgO-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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김선효KIM, SEON HYO
Ferrous & Energy Materials Technology
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