DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, SJ | - |
dc.contributor.author | Sung Kyun Lee | - |
dc.contributor.author | Minho Jo | - |
dc.contributor.author | Chang-Soo Lee | - |
dc.contributor.author | Kwon, S | - |
dc.contributor.author | Hyungjun Kim | - |
dc.date.accessioned | 2017-07-18T12:28:06Z | - |
dc.date.available | 2017-07-18T12:28:06Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/30108 | - |
dc.description.abstract | We have deposited transparent conducting Al-doped ZnO films on glass and Si substrates by atomic layer deposition (ALD) at a relatively low substrate temperature of 200 degrees C and evaluated the electrical and the optical properties of these films. For Al-doped ZnO film growth by using the ALD process, diethylzinc (DEZ) and trimethylaluminum (TMA) were used as metal precursors and water as a reactant. The process conditions were optimized by varying the deposition temperature, The TMA:DEZ cycle ratio and TMA exposure time and an Al-doped ZnO film with a resistivity of 1.09 x 10(-3) Omega.cm, a carrier concentration of 1.16 x 10(21) cm(-3) and a carrier mobility of 5.0 cm(2)/V.S was attained. In addition, the Al-doped ZnO film was focused to have a relevant transmittance as a transparent conducting electrode. The transmittances of the film in the visible region were in excess of 80% (450 nm <= lambda <= 1100 nm) and 65% (380 nm <= lambda <= 450 nm). | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.subject | transparent conducting oxides | - |
dc.subject | atomic layer deposition | - |
dc.subject | Al-doped ZnO films | - |
dc.subject | TRANSPARENT CONDUCTING OXIDES | - |
dc.subject | PULSED-LASER DEPOSITION | - |
dc.subject | THIN-FILMS | - |
dc.subject | AL FILMS | - |
dc.title | In-situ doping during ZnO atomic layer deposition | - |
dc.type | Article | - |
dc.identifier.doi | 10.3938/jkps.53.253 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.253 - 257 | - |
dc.identifier.wosid | 000257664700055 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 257 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 253 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 53 | - |
dc.contributor.affiliatedAuthor | Kwon, S | - |
dc.identifier.scopusid | 2-s2.0-49649114659 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 9 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | transparent conducting oxides | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | Al-doped ZnO films | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
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