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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 손낙진 | ko |
| dc.contributor.author | 박성수 | ko |
| dc.contributor.author | 안정착 | ko |
| dc.contributor.author | 권오대 | ko |
| dc.contributor.author | 계용찬 | ko |
| dc.contributor.author | 정지채 | ko |
| dc.contributor.author | 최영수 | ko |
| dc.contributor.author | 강응철 | ko |
| dc.contributor.author | 김재기 | ko |
| dc.date.accessioned | 2017-07-18T12:59:20Z | - |
| dc.date.available | 2017-07-18T12:59:20Z | - |
| dc.date.created | 2009-03-26 | - |
| dc.date.issued | 2002-01 | - |
| dc.identifier.citation | J.KITE, no.10, pp.1361 - 1368 | - |
| dc.identifier.issn | 1016-135x | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/30179 | - |
| dc.language | Korean | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | Fabrication of High Power InGaAs Laser Diode | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.contributor.nonIdAuthor | 손낙진 | - |
| dc.contributor.nonIdAuthor | 박성수 | - |
| dc.contributor.nonIdAuthor | 안정착 | - |
| dc.contributor.nonIdAuthor | 계용찬 | - |
| dc.contributor.nonIdAuthor | 정지채 | - |
| dc.contributor.nonIdAuthor | 최영수 | - |
| dc.contributor.nonIdAuthor | 강응철 | - |
| dc.contributor.nonIdAuthor | 김재기 | - |
| dc.citation.endPage | 1368 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | 1361 | - |
| dc.citation.title | J.KITE | - |
| dc.description.journalClass | 2 | - |
| dc.type.docType | Article | - |
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