SUBSTRATE EFFECTS ON THE HETEROEPITAXIAL GROWTH OF ZNO THIN FILMS BY PULSED LASER DEPOSITION
SCIE
SCOPUS
- Title
- SUBSTRATE EFFECTS ON THE HETEROEPITAXIAL GROWTH OF ZNO THIN FILMS BY PULSED LASER DEPOSITION
- Authors
- Kim S.S; Je J.H; Kim J.H.
- Date Issued
- 2004-09
- Publisher
- WILEY - VCH VERLAG
- Abstract
- Heteroepitaxial ZnO thin films were grown by pulsed laser deposition (PLD) technique on various substrates such as GaN buffered C-plane Al2O3, C-Plane Al2O3, A-plane Al2O3, and R-plane Al2O3. Films were formed with a laser fluence of 1.5 J/cm(2) at 600degreesC in an O-2 ambient pressure of 0.5 mTorr. Crystallinity, morphology, and crystallographic orientation relationship of ZnO thin films were investigated by X-ray diffraction and transmission electron microscopy (TEM). X-ray diffraction results showed that ZnO films were grown with (0002) out-of plane orientation on all substrates except on the R-plane Al2O3 substrate where (11-20) oriented domains were dominant. Cross-sectional TEM results showed that all ZnO/substrate systems have sharp interfaces on an atomic level without any indication of interfacial layer. It was observed that ZnO films on GaN, C-Al2O3, and R-Al2O3 substrates have epitaxial orientation relationships of (0001)[2-1-10](ZnO))//(0001)[2-1-10](GaN), (0001)[2-1-10](ZnO)//(0001)[10-10](C-Al2O3), and (1120)[0001](ZnO)//(10-12)[-1011](R-Al2O3), respectively. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/31770
- DOI
- 10.1002/pssc.200405045
- ISSN
- 1610-1634
- Article Type
- Article
- Citation
- Physica Status Solidi C: Conferences, vol. 1, no. 10, page. 2541 - 2544, 2004-09
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