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dc.contributor.authorPark,Hong-June-
dc.contributor.authorKo,PingKeung-
dc.contributor.authorHu,Chenming-
dc.date.accessioned2017-07-19T04:40:54Z-
dc.date.available2017-07-19T04:40:54Z-
dc.date.created2009-08-18-
dc.date.issued1991-05-
dc.identifier.issn0278-0070-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/33211-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers, New York-
dc.relation.isPartOfIEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS-
dc.titleA charge conserving non-quasi-static (NQS) MOSFET model for SPICE transient analysis-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, v.10, no.5, pp.629 - 642-
dc.citation.endPage642-
dc.citation.number5-
dc.citation.startPage629-
dc.citation.titleIEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS-
dc.citation.volume10-
dc.contributor.affiliatedAuthorPark,Hong-June-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-

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박홍준PARK, HONG JUNE
Dept of Electrical Enginrg
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