DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SK | - |
dc.contributor.author | Choe, SM | - |
dc.contributor.author | Ahn, CG | - |
dc.contributor.author | Chung, WJ | - |
dc.contributor.author | Kwon, YK | - |
dc.contributor.author | Kang, BK | - |
dc.contributor.author | Kim, O | - |
dc.date.accessioned | 2017-07-19T06:47:25Z | - |
dc.date.available | 2017-07-19T06:47:25Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 1997-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/33814 | - |
dc.description.abstract | N-channel and p-channel metal-oxide-semiconductor (MOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly-Si0.88Ge0.12) films by a low temperature (less than or equal to 550 degrees C) process. These devices employ in-situ n(+) doped poly-Si0.65Ge0.35 films as gate electrodes to reduce the process time and temperature, dual-offset spacers to reduce the electric field in the drain junction region, and silicon capping layers to protect the poly-Si1-xGex films against oxygen. The I-d-V-g characteristics in n-channel TFT's, as well as in p-channel TFT's, exhibit good behavior after remote-PECVD hydrogenation. Further improvements on electrical properties in n-channel TFT's are limited by trap-inducing Ge behaviors in poly-Si1-xGex films. | - |
dc.language | English | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.subject | polycrystalline silicon germanium | - |
dc.subject | TFT | - |
dc.subject | low temperature | - |
dc.subject | CMOS TFT | - |
dc.subject | RTCVD | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | TRANSISTORS | - |
dc.subject | ALLOYS | - |
dc.title | Low temperature (<=550 degrees C) fabrication of CMOS TFT's on rapid-thermal CVD polycrystalline silicon-germanium films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1143/JJAP.36.1389 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.36, no.3B, pp.1389 - 1393 | - |
dc.identifier.wosid | A1997WT45700016 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.endPage | 1393 | - |
dc.citation.number | 3B | - |
dc.citation.startPage | 1389 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.citation.volume | 36 | - |
dc.contributor.affiliatedAuthor | Kang, BK | - |
dc.contributor.affiliatedAuthor | Kim, O | - |
dc.identifier.scopusid | 2-s2.0-3743058214 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | ALLOYS | - |
dc.subject.keywordAuthor | polycrystalline silicon germanium | - |
dc.subject.keywordAuthor | TFT | - |
dc.subject.keywordAuthor | low temperature | - |
dc.subject.keywordAuthor | CMOS TFT | - |
dc.subject.keywordAuthor | RTCVD | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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