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dc.contributor.authorLee, JS-
dc.contributor.authorAhn, KH-
dc.contributor.authorJeong, YH-
dc.date.accessioned2017-07-19T06:48:32Z-
dc.date.available2017-07-19T06:48:32Z-
dc.date.created2009-08-06-
dc.date.issued1996-01-
dc.identifier.issn0951-3248-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/33824-
dc.description.abstractQuantum Hall effect devices based on delta-doped Al0.25Ga0.75In0.25Ga0.75As/GaAs pseudomorphic heterostructure materials grown by low-pressure metal organic chemical vapor deposition(LP-MOCVD) are sucessfully fabricated. A high electron mobility of 7200 cm(2)/V . s with a sheet carrier density of 2.0 x 10(12)cm(-2) has been achieved at room temperature. The temperature coefficient of product sensitivity is -0.1%/K. The minimum detectable magnetic field (B-min) of 3 mu T at 1 Hz is achieved due to the high electron mobility.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.relation.isPartOfINSTITUTE OF PHYSICS CONFERENCE SERIES-
dc.subjectSUPERLATTICE STRUCTURES-
dc.titleQuantum Hall effect devices of delta-doped Al(0.25)Ga(0.75)AS/In(0.25)Ga(0.75)AS/GaAs pseudomorphic heterostructures grown by LP-MOCVD-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.bibliographicCitationINSTITUTE OF PHYSICS CONFERENCE SERIES, v.145, pp.887 - 892-
dc.identifier.wosidA1996BF51P00161-
dc.date.tcdate2018-03-23-
dc.citation.endPage892-
dc.citation.startPage887-
dc.citation.titleINSTITUTE OF PHYSICS CONFERENCE SERIES-
dc.citation.volume145-
dc.contributor.affiliatedAuthorLee, JS-
dc.contributor.affiliatedAuthorJeong, YH-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc0-
dc.type.docTypeArticle; Proceedings Paper-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.description.journalRegisteredClassscie-
dc.relation.journalResearchAreaPhysics-

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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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