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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Woo J. | - |
| dc.contributor.author | Song J. | - |
| dc.contributor.author | Moon K. | - |
| dc.contributor.author | Lee J.H. | - |
| dc.contributor.author | Cha E. | - |
| dc.contributor.author | Prakash A. | - |
| dc.contributor.author | Lee D. | - |
| dc.contributor.author | Lee S. | - |
| dc.contributor.author | Park J. | - |
| dc.contributor.author | Koo Y. | - |
| dc.contributor.author | Park C.G. | - |
| dc.contributor.author | Hwang H. | - |
| dc.date.accessioned | 2017-07-19T10:00:25Z | - |
| dc.date.available | 2017-07-19T10:00:25Z | - |
| dc.date.created | 2015-02-24 | - |
| dc.date.issued | 2014-09 | - |
| dc.identifier.issn | 0743-1562 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/34931 | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.relation.isPartOf | Digest of Technical Papers - Symposium on VLSI Technology | - |
| dc.title | Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2) | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1109/VLSIT.2014.6894431 | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | Digest of Technical Papers - Symposium on VLSI Technology | - |
| dc.citation.title | Digest of Technical Papers - Symposium on VLSI Technology | - |
| dc.contributor.affiliatedAuthor | Park C.G. | - |
| dc.identifier.scopusid | 2-s2.0-84907683359 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.scptc | 3 | * |
| dc.date.scptcdate | 2018-05-121 | * |
| dc.type.docType | ARTICLE | - |
| dc.description.journalRegisteredClass | scopus | - |
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Related Researcher
- 박찬경PARK, CHAN GYUNG
- Dept of Materials Science & Enginrg