DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, SW | - |
dc.contributor.author | Shin, M | - |
dc.contributor.author | Park, JY | - |
dc.contributor.author | Kim, BS | - |
dc.contributor.author | Tu, D | - |
dc.contributor.author | Jeon, S | - |
dc.contributor.author | Jeong, U | - |
dc.date.accessioned | 2017-07-19T11:39:58Z | - |
dc.date.available | 2017-07-19T11:39:58Z | - |
dc.date.created | 2015-09-24 | - |
dc.date.issued | 2015-05 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35284 | - |
dc.description.abstract | Poly(3-hexylthiophene)(P3HT) transistors with a thin ion-gel gate dielectric layer (100 nm thickness) was fabricated. The thin ion-gel dielectric layer retarded the capacitance drop at high frequencies and the diffusion of the ionic molecules in the polymer active layer that are severe drawbacks of the ion-gel dielectric transistors. Thereby, the thin ion-gel transistors showed hysteresis-free I-V characteristics, less frequency-dependence, and enhanced bias-stability. The average charge mobility was similar to 2 cm(2)/Vs and the on/off ratio was 10(4)similar to 10(5). The dependence of the capacitance and the kinetics of ion translation on the thickness of the ion-gel were discussed by both experiments and theoretical calculations. | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.relation.isPartOf | SCIENCE OF ADVANCED MATERIALS | - |
dc.title | Thin Ion-gel Dielectric Layer to Enhance the Stability of Polymer Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/SAM.2015.1890 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SCIENCE OF ADVANCED MATERIALS, v.7, no.5, pp.874 - 880 | - |
dc.identifier.wosid | 000349140900008 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.endPage | 880 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 874 | - |
dc.citation.title | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.volume | 7 | - |
dc.contributor.affiliatedAuthor | Jeong, U | - |
dc.identifier.scopusid | 2-s2.0-84961289052 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.description.scptc | 1 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | FILM TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordAuthor | Organic Thin Film Transistors | - |
dc.subject.keywordAuthor | Polymer Transistors | - |
dc.subject.keywordAuthor | Ion-Gel Dielectric | - |
dc.subject.keywordAuthor | High Capacitance | - |
dc.subject.keywordAuthor | Device Stability | - |
dc.subject.keywordAuthor | poly(3-hexylthiophene) | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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