A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy
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- Title
- A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy
- Authors
- Lee, JH; Cha, EJ; Kim, YT; Chae, BK; Kim, JJ; Lee, SY; Hwang, HS; Park, CG
- Date Issued
- 2015-12
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- Threshold switching is a phenomenon where the resistivity of an insulating material changes and the insulator exhibits metallic behavior. This could be explained by phase transformation in oxide materials; however, this behavior is also seen in amorphous insulators. In this study, through an ex-situ experiment using transmission electron microscopy (TEM), we proved that threshold switching of amorphous NbO2 accompanies local crystallization. The change in I V characteristics after electroforming was examined by evaluating the concentration profile. Atom probe tomography (APT) combined with in-situ TEM probing technique was performed to understand the threshold switching in amorphous NbO2. The local crystallization in amorphous NbO2 was validated by the observed difference in time-of-flight (ToF) between amorphous and crystalline NbO2. We concluded that the slower ToF of amorphous NbO2 (a-NbO2) compared with crystalline NbO2 (a-NbO2) is due to the resistivity difference and trap-assisted recombination. (C) 2015 Elsevier Ltd. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35344
- DOI
- 10.1016/J.MICRON.2015.07.015
- ISSN
- 0968-4328
- Article Type
- Article
- Citation
- MICRON, vol. 79, page. 101 - 109, 2015-12
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