DC Field | Value | Language |
---|---|---|
dc.contributor.author | Na, S | - |
dc.contributor.author | Kang, JG | - |
dc.contributor.author | Choi, J | - |
dc.contributor.author | Lee, Nam-Suk | - |
dc.contributor.author | Park, CG | - |
dc.contributor.author | Kim, H | - |
dc.contributor.author | Lee, SH | - |
dc.contributor.author | Lee, HJ | - |
dc.date.accessioned | 2017-07-19T11:42:37Z | - |
dc.date.available | 2017-07-19T11:42:37Z | - |
dc.date.created | 2015-12-22 | - |
dc.date.issued | 2015-06-15 | - |
dc.identifier.issn | 1359-6454 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35354 | - |
dc.description.abstract | In this study, we investigated the effects of Mo addition to Yb as a contact material with Si for metal oxide-semiconductor field-effect transistors (MOSFETs) to mitigate oxidation problems, a persistent problem for rare-earth metal-based contacts (such as Yb/Si and Er/Si). Our thorough materials characterization using transmission electron microscopy and X-ray diffraction unravels Mo segregation during silicidation and its effect against oxidation. I-V characteristics, measured from Schottky diodes produced from the samples, reflect such microstructure evolution and demonstrate a strong improvement in contact properties at high temperatures. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.relation.isPartOf | ACTA MATERIALIA | - |
dc.subject | Yb silicide | - |
dc.subject | Mo-alloyed ytterbium | - |
dc.subject | Epitaxial layer | - |
dc.subject | Schottky barrier height | - |
dc.subject | Thermal stability | - |
dc.title | Silicidation of Mo-alloyed ytterbium: Mo alloying effects on microstructure evolution and contact properties | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/J.ACTAMAT.2015.03.041 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ACTA MATERIALIA, v.92, pp.1 - 7 | - |
dc.identifier.wosid | 000355054600001 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.endPage | 7 | - |
dc.citation.startPage | 1 | - |
dc.citation.title | ACTA MATERIALIA | - |
dc.citation.volume | 92 | - |
dc.contributor.affiliatedAuthor | Lee, Nam-Suk | - |
dc.contributor.affiliatedAuthor | Park, CG | - |
dc.contributor.affiliatedAuthor | Kim, H | - |
dc.identifier.scopusid | 2-s2.0-84927168681 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.description.scptc | 2 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LOW SCHOTTKY-BARRIER | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | METALS | - |
dc.subject.keywordPlus | MOSFET | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | Yb silicide | - |
dc.subject.keywordAuthor | Mo-alloyed ytterbium | - |
dc.subject.keywordAuthor | Epitaxial layer | - |
dc.subject.keywordAuthor | Schottky barrier height | - |
dc.subject.keywordAuthor | Thermal stability | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
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