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Cited 2 time in webofscience Cited 2 time in scopus
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dc.contributor.authorNa, S-
dc.contributor.authorKang, JG-
dc.contributor.authorChoi, J-
dc.contributor.authorLee, Nam-Suk-
dc.contributor.authorPark, CG-
dc.contributor.authorKim, H-
dc.contributor.authorLee, SH-
dc.contributor.authorLee, HJ-
dc.date.accessioned2017-07-19T11:42:37Z-
dc.date.available2017-07-19T11:42:37Z-
dc.date.created2015-12-22-
dc.date.issued2015-06-15-
dc.identifier.issn1359-6454-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/35354-
dc.description.abstractIn this study, we investigated the effects of Mo addition to Yb as a contact material with Si for metal oxide-semiconductor field-effect transistors (MOSFETs) to mitigate oxidation problems, a persistent problem for rare-earth metal-based contacts (such as Yb/Si and Er/Si). Our thorough materials characterization using transmission electron microscopy and X-ray diffraction unravels Mo segregation during silicidation and its effect against oxidation. I-V characteristics, measured from Schottky diodes produced from the samples, reflect such microstructure evolution and demonstrate a strong improvement in contact properties at high temperatures. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.relation.isPartOfACTA MATERIALIA-
dc.subjectYb silicide-
dc.subjectMo-alloyed ytterbium-
dc.subjectEpitaxial layer-
dc.subjectSchottky barrier height-
dc.subjectThermal stability-
dc.titleSilicidation of Mo-alloyed ytterbium: Mo alloying effects on microstructure evolution and contact properties-
dc.typeArticle-
dc.identifier.doi10.1016/J.ACTAMAT.2015.03.041-
dc.type.rimsART-
dc.identifier.bibliographicCitationACTA MATERIALIA, v.92, pp.1 - 7-
dc.identifier.wosid000355054600001-
dc.date.tcdate2019-03-01-
dc.citation.endPage7-
dc.citation.startPage1-
dc.citation.titleACTA MATERIALIA-
dc.citation.volume92-
dc.contributor.affiliatedAuthorLee, Nam-Suk-
dc.contributor.affiliatedAuthorPark, CG-
dc.contributor.affiliatedAuthorKim, H-
dc.identifier.scopusid2-s2.0-84927168681-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc2-
dc.description.scptc2*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusLOW SCHOTTKY-BARRIER-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusMETALS-
dc.subject.keywordPlusMOSFET-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorYb silicide-
dc.subject.keywordAuthorMo-alloyed ytterbium-
dc.subject.keywordAuthorEpitaxial layer-
dc.subject.keywordAuthorSchottky barrier height-
dc.subject.keywordAuthorThermal stability-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMetallurgy & Metallurgical Engineering-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaMetallurgy & Metallurgical Engineering-

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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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