Extraction of source/drain resistivity parameters optimized for double-gate FinFETs

Abstract

Source/drain series resistances (R-sd) of n- and p-type double-gate fin field-effect transistors (FinFETs) were successfully extracted using the methods applicable to short channel devices. Rsd is decomposed into spreading, sheet, and contact resistances considering top and sidewall contact resistances separately. Resistivity parameters defined in the analytic model were extracted from the extracted Rsd values of FinFETs with different fin widths and spacer lengths, and the proposed model showed good agreement to the experimental data. (C) 2015 The Japan Society of Applied Physics