DC Field | Value | Language |
---|---|---|
dc.contributor.author | Biswas, A | - |
dc.contributor.author | Lee, YW | - |
dc.contributor.author | Jeong, YH | - |
dc.date.accessioned | 2017-07-19T12:12:37Z | - |
dc.date.available | 2017-07-19T12:12:37Z | - |
dc.date.created | 2016-01-12 | - |
dc.date.issued | 2015-09-07 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35443 | - |
dc.description.abstract | We have investigated the electronic and magnetic properties of perovskite SrRu1-xIrxO3 (0.0 <= x <= 0.25) thin films grown by pulsed laser deposition on atomically flat (001) SrTiO3 substrates. SrRuO3 has the properties of a ferromagnetic metal (resistivity rho similar to 200 mu Omega.cm at T = 300 K) with Curie temperature T-C similar to 150 K. Substituting Ir (5d(5+)) for Ru (4d(4+)) in SrRuO3, films (0.0 <= x <= 0.20) showed fully metallic behavior and ferromagnetic ordering, although rho increased and the ferromagnetic T-C decreased. Films with x = 0.25 underwent the metal-to-insulator transition (T-MIT similar to 75 K) in rho, and spin-glass-like ordering (T-SG similar to 45 K) with the elimination of ferromagnetic long-range ordering caused by the electron localization at the substitution sites. In ferromagnetic films (0.0 <= x <= 0.20), rho increased near-linearly with T at T> T-C, but in paramagnetic film (x = 0.25) rho increased as T-3/2 at T>T-MIT. Moreover, observed spin-glass-like (T-SG) ordering with the negative magnetoresistance at T< T-MIT in film with x = 0.25 validates the hypothesis that (Anderson) localization favors glassy ordering at amply disorder limit. These observations provide a promising approach for future applications and of fundamental interest in 4d and 5d mixed perovskites. (C) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.subject | ITINERANT FERROMAGNET SRRUO3 | - |
dc.subject | METAL-INSULATOR-TRANSITION | - |
dc.subject | TRANSPORT-PROPERTIES | - |
dc.subject | ELECTRICAL-RESISTIVITY | - |
dc.subject | SYSTEM | - |
dc.subject | SR1-XCAXRUO3 | - |
dc.subject | OXIDES | - |
dc.subject | RANGE | - |
dc.title | Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4929966 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.118, no.9 | - |
dc.identifier.wosid | 000360926500036 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.number | 9 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 118 | - |
dc.contributor.affiliatedAuthor | Jeong, YH | - |
dc.identifier.scopusid | 2-s2.0-84941045904 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 1 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ITINERANT FERROMAGNET SRRUO3 | - |
dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
dc.subject.keywordPlus | TRANSPORT-PROPERTIES | - |
dc.subject.keywordPlus | ELECTRICAL-RESISTIVITY | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.subject.keywordPlus | SR1-XCAXRUO3 | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | RANGE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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