DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jee, S | - |
dc.contributor.author | Lee, J | - |
dc.contributor.author | Son, J | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Kim, CH | - |
dc.contributor.author | Moon, J | - |
dc.contributor.author | Kim, B | - |
dc.date.accessioned | 2017-07-19T12:14:48Z | - |
dc.date.available | 2017-07-19T12:14:48Z | - |
dc.date.created | 2016-01-15 | - |
dc.date.issued | 2015-09 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35503 | - |
dc.description.abstract | A power amplifier (PA) for a femto-cell base station should be highly efficient and small. The efficiency for amplification of a high peak-to-average power ratio (PAPR) signal is improved by designing an asymmetric Doherty power amplifier (DPA). From the simulation result for a long-term evolution (LTE) signal with 7.2-dB PAPR, the DPA delivers the highest efficiency with 1: 1.4 cell size ratio for the carrier and peaking PAs. A small size is achieved by designing the DPA using a GaN monolithic microwave integrated circuit process. For broadband operation, we employ a new circuit topology to alleviate the bandwidth limiting factors of the DPA such as a quarter-wavelength transformer, phase compensation network, and offset line. With the design concept, an asymmetric broadband DPA is implemented using a TriQuint 3MI 0.25-mu m GaN-HEMT MMIC process. Across 2.1-2.7 GHz, the implemented PA deliver a drain efficiency of over 49%, a gain of over 12.6 dB, and adjacent channel leakage ratio of below -45 dBc at an average power of over 33.1 dBm for the LTE signal. This fully integrated circuit has a chip-size of 2.65 mm 1.9 mm. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.title | Asymmetric Broadband Doherty Power Amplifier Using GaN MMIC for Femto-Cell Base-Station | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/TMTT.2015.2442973 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.63, no.9, pp.2802 - 2810 | - |
dc.identifier.wosid | 000361242500012 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.endPage | 2810 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 2802 | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 63 | - |
dc.contributor.affiliatedAuthor | Kim, B | - |
dc.identifier.scopusid | 2-s2.0-85027957582 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 12 | - |
dc.description.scptc | 2 | * |
dc.date.scptcdate | 2017-08-235 | * |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | WIDE-BAND | - |
dc.subject.keywordPlus | HIGH-EFFICIENCY | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordAuthor | Broadband power amplifier (PA) | - |
dc.subject.keywordAuthor | digital predistortion (DPD) | - |
dc.subject.keywordAuthor | Doherty power amplifier (DPA) | - |
dc.subject.keywordAuthor | gallium-nitride (GaN) | - |
dc.subject.keywordAuthor | long-term evolution (LTE) | - |
dc.subject.keywordAuthor | monolithic microwave integrated circuit (MMIC) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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