DC Field | Value | Language |
---|---|---|
dc.contributor.author | Heo, H | - |
dc.contributor.author | Sung, JH | - |
dc.contributor.author | Jin, G | - |
dc.contributor.author | Ahn, JH | - |
dc.contributor.author | Kim, K | - |
dc.contributor.author | Lee, MJ | - |
dc.contributor.author | Cha, S | - |
dc.contributor.author | Choi, H | - |
dc.contributor.author | Jo, MH | - |
dc.date.accessioned | 2017-07-19T12:19:49Z | - |
dc.date.available | 2017-07-19T12:19:49Z | - |
dc.date.created | 2016-01-28 | - |
dc.date.issued | 2015-07-01 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35649 | - |
dc.description.abstract | 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.relation.isPartOf | ADVANCED MATERIALS | - |
dc.title | Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/ADMA.201500846 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.27, no.25, pp.3803 - 3810 | - |
dc.identifier.wosid | 000357335900011 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.endPage | 3810 | - |
dc.citation.number | 25 | - |
dc.citation.startPage | 3803 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 27 | - |
dc.contributor.affiliatedAuthor | Jo, MH | - |
dc.identifier.scopusid | 2-s2.0-85027928601 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 53 | - |
dc.description.scptc | 24 | * |
dc.date.scptcdate | 2017-08-235 | * |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LATERAL HETEROSTRUCTURES | - |
dc.subject.keywordPlus | VALLEY POLARIZATION | - |
dc.subject.keywordPlus | DIRAC FERMIONS | - |
dc.subject.keywordPlus | SURFACE-ENERGY | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | ABSORPTION | - |
dc.subject.keywordPlus | NANOSHEETS | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | heterostructures | - |
dc.subject.keywordAuthor | hexagonal transition-metal dichalcogenides | - |
dc.subject.keywordAuthor | monolayer semiconductors | - |
dc.subject.keywordAuthor | superlattices | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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