DC Field | Value | Language |
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dc.contributor.author | Shin, K | - |
dc.contributor.author | Kang, DS | - |
dc.contributor.author | Lee, SH | - |
dc.contributor.author | Moon, W | - |
dc.date.accessioned | 2017-07-19T12:20:32Z | - |
dc.date.available | 2017-07-19T12:20:32Z | - |
dc.date.created | 2016-02-01 | - |
dc.date.issued | 2015-12 | - |
dc.identifier.issn | 0304-3991 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/35672 | - |
dc.description.abstract | We propose a method for measuring the capacitance of a thin layer using a Tip-on-Gate of Field-Effect Transistor (ToGoFET) probe. A ToGoFET probe with a metal-oxide-semiconductor field-effect transistor (MOSFET) with an ion-implant channel was embedded at the end of a cantilever and a Pt tip was fabricated using micro-machining. The ToGoFET probe was used to detect an alternating electric field at the dielectric surface. A dielectric buried metal sample was prepared; a sinusoidal input signal was applied to the buried metal lines; and the ToGoFET probe detected the electric field at the tip via the dielectric. The AC signal detected by the ToGoFET probe was demodulated by a simple AC-to-DC converter. Experimentally, it was shown that an electric field could be measured at the surface of the dielectric layer above a buried metal line. This promising result shows that it is possible to measure the surface local capacitance. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | ULTRAMICROSCOPY | - |
dc.title | A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/J.ULTRAMIC.2015.07.007 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | ULTRAMICROSCOPY, v.159, pp.1 - 10 | - |
dc.identifier.wosid | 000366220000001 | - |
dc.date.tcdate | 2019-03-01 | - |
dc.citation.endPage | 10 | - |
dc.citation.startPage | 1 | - |
dc.citation.title | ULTRAMICROSCOPY | - |
dc.citation.volume | 159 | - |
dc.contributor.affiliatedAuthor | Moon, W | - |
dc.identifier.scopusid | 2-s2.0-84938071369 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Scanning probe microscopy | - |
dc.subject.keywordAuthor | Metal-oxide-semiconductor transistor | - |
dc.subject.keywordAuthor | Surface electric field | - |
dc.subject.keywordAuthor | Amplitude modulation | - |
dc.subject.keywordAuthor | Local capacitance | - |
dc.relation.journalWebOfScienceCategory | Microscopy | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Microscopy | - |
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