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Cited 28 time in webofscience Cited 28 time in scopus
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dc.contributor.authorALLEN, S. JAMES-
dc.contributor.authorHAUSER, ADAM J-
dc.contributor.authorMIKHEEV, EVGENY-
dc.contributor.authorZHANG, JACK Y-
dc.contributor.authorMORENO, NELSON E-
dc.contributor.authorSon, J-
dc.contributor.authorOUELLETTE, DANIEL-
dc.contributor.authorKALLY, JAMES-
dc.contributor.authorKOZHANOV, ALEX-
dc.contributor.authorBALENTS, LEON-
dc.contributor.authorStemmer, S-
dc.date.accessioned2017-07-19T12:25:18Z-
dc.date.available2017-07-19T12:25:18Z-
dc.date.created2016-02-19-
dc.date.issued2015-06-
dc.identifier.issn2166-532X-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/35795-
dc.description.abstractWe report on tunneling measurements that reveal the evolution of the quasiparticle state density in two rare earth perovskite nickelates, NdNiO3 and LaNiO3, that are close to a bandwidth controlled metal to insulator transition. We measure the opening of a sharp gap of similar to 30 meV in NdNiO3 in its insulating ground state. LaNiO3, which remains a correlated metal at all practical temperatures, exhibits a pseudogap of the same order. The results point to both types of gaps arising from a common origin, namely, a quantum critical point associated with the T = 0 K metal-insulator transition. The results support theoretical models of the quantum phase transition in terms of spin and charge instabilities of an itinerant Fermi surface. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPL MATERIALS-
dc.titleGaps and pseudogaps in perovskite rare earth nickelates-
dc.typeArticle-
dc.identifier.doi10.1063/1.4907771-
dc.type.rimsART-
dc.identifier.bibliographicCitationAPL MATERIALS, v.3, no.6-
dc.identifier.wosid000357608900014-
dc.date.tcdate2019-03-01-
dc.citation.number6-
dc.citation.titleAPL MATERIALS-
dc.citation.volume3-
dc.contributor.affiliatedAuthorSon, J-
dc.identifier.scopusid2-s2.0-84928782058-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc16-
dc.description.scptc10*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusMETAL-INSULATOR-TRANSITION-
dc.subject.keywordPlusNDNIO3 THIN-FILMS-
dc.subject.keywordPlusRNIO3 R-
dc.subject.keywordPlusCONDUCTIVITY-
dc.subject.keywordPlusOXIDES-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-

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손준우SON, JUNWOO
Dept of Materials Science & Enginrg
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