Branching-induced spin polarization amplification in nonmagnetic semiconductors
SCIE
SCOPUS
- Title
- Branching-induced spin polarization amplification in nonmagnetic semiconductors
- Authors
- Soon-Wook Jung; Lee, H.-W.
- Date Issued
- 2006-12
- Publisher
- Wiley-VCH Verlag
- Abstract
- We study the spin injection in ferromagnet-tunnel barrier-semiconductor heterojunction structure embedded in the current-branching scheme. The current branching enables one to separately control the charge current from the spin current. As a result, it is possible to electrically control the spin current polarization within the semiconductor. Moreover, it can be enhanced further and may reach 100% by properly tuning the branched currents. Since the proposed scheme does not require low temperature operation, it may be a useful tool to generate the high spin current polarization at room temperature. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35966
- DOI
- 10.1002/PSSC.200672811
- ISSN
- 1862-6351
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI C: CONFERENCES, vol. 3, no. 12, page. 4313 - 4316, 2006-12
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