Patterning of amorphous-InGaZnO thin-film transistors by stamping of surface-modified polydimethylsiloxane
SCIE
SCOPUS
- Title
- Patterning of amorphous-InGaZnO thin-film transistors by stamping of surface-modified polydimethylsiloxane
- Authors
- Chungwan Gu; Lee, JS
- Date Issued
- 2016-04
- Publisher
- Royal Society of Chemistry
- Abstract
- An indium gallium zinc oxide (IGZO) layer was patterned and thin-film transistors (TFTs) were fabricated by surface modified polydimethylsiloxane (PDMS) stamping and IGZO solution. The PDMS stamp was prepared by immersion in piranha solution and treatment with UV-ozone to make a hydrophilic surface. Patterned PDMS was inked by contact with the IGZO layer, and then stamped on the desired substrate. The process did not cause etching damage, so the stamped amorphous-IGZO TFTs showed low leakage current of similar to 10(-11) A, high on/off current ratio of similar to 10(8), carrier mobility of 6 cm(2) V-1 s(-1), and narrow hysteresis of 0.2 V. UV irradiation on the IGZO layer caused a photochemical annealing effect that improved the electrical properties of IGZO TFTs. This method provides a simple and versatile process to fabricate transparent metal-oxide TFTs based on patterning the devices by reusable stamping methods.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36067
- DOI
- 10.1039/C6RA06264D
- ISSN
- 2046-2069
- Article Type
- Article
- Citation
- RSC Advances, vol. 6, no. 49, page. 43147 - 43151, 2016-04
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.