DC Field | Value | Language |
---|---|---|
dc.contributor.author | Meixner, P | - |
dc.contributor.author | Lim, SJ | - |
dc.contributor.author | Park, J | - |
dc.contributor.author | Kim, JS | - |
dc.contributor.author | Fischer, SF | - |
dc.contributor.author | Seo, J | - |
dc.contributor.author | Kuk, Y | - |
dc.date.accessioned | 2017-07-19T12:37:56Z | - |
dc.date.available | 2017-07-19T12:37:56Z | - |
dc.date.created | 2016-02-12 | - |
dc.date.issued | 2016-01-15 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/36149 | - |
dc.description.abstract | While applying a new cleaving method, we investigated the growth of Nb on the three-dimensional (3D) topological insulator (TI) Bi2Te1.95Se1.05 by scanning tunneling microscopy and spectroscopy. After the deposition of nearly a full monolayer of Nb by high-energy electron-beam evaporation, we observed a downshift of the bands and the Dirac point on the TI surface, which is the result of an n-type doping of the TI by transition metal adatoms. Extra peaks in the spectroscopy results upon Nb deposition might indicate a Rashba-split of the bulk bands. Nb grew in small 10 nm wide islands upon sub-monolayer growth and in a layer-by-layer growth mode up to an annealing temperature of 450 degrees C. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.title | Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05 | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/J.APSUSC.2015.11.163 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.361, pp.185 - 189 | - |
dc.identifier.wosid | 000366805300025 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 189 | - |
dc.citation.startPage | 185 | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 361 | - |
dc.contributor.affiliatedAuthor | Kim, JS | - |
dc.identifier.scopusid | 2-s2.0-84952360200 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.scptc | 0 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SURFACE-STATES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SUPERCONDUCTIVITY | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordAuthor | Scanning tunneling microscopy | - |
dc.subject.keywordAuthor | Topological insulators | - |
dc.subject.keywordAuthor | Niobium | - |
dc.subject.keywordAuthor | Bi2Te2Se | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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