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Cited 3 time in webofscience Cited 3 time in scopus
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dc.contributor.authorKwon, HJ-
dc.contributor.authorLim, JH-
dc.contributor.authorKim, B-
dc.contributor.authorSim, JY-
dc.contributor.authorPark, HJ-
dc.date.accessioned2017-07-19T12:41:49Z-
dc.date.available2017-07-19T12:41:49Z-
dc.date.created2016-01-21-
dc.date.issued2015-06-
dc.identifier.issn1598-1657-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/36281-
dc.description.abstractSmall-area, low-power coarse and fine frequency detectors (FDs) are proposed for an adaptive bandwidth referenceless CDR with a wide range of input data rate. The coarse FD implemented with two flip-flops eliminates harmonic locking as long as the initial frequency of the CDR is lower than the target frequency. The fine FD samples the incoming input data by using half-rate four phase clocks, while the conventional rotational FD samples the full-rate clock signal by the incoming input data. The fine FD uses only a half number of flip-flops compared to the rotational FD by sharing the sampling and retiming circuitry with PLL. The proposed CDR chip in a 65-nm CMOS process satisfies the jitter tolerance specifications of both USB 3.0 and USB 3.1. The proposed CDR works in the range of input data rate; 2 Gb/s similar to 8 Gb/s at 1.2 V, 4 Gb/s similar to 11 Gb/s at 1.5 V. It consumes 26 mW at 5 Gb/s and 1.2 V, and 41 mW at 10 Gb/s and 1.5 V. The measured phase noise was -97.76 dBc/Hz at the 1 MHz frequency offset from the center frequency of 2.5 GHz. The measured rms jitter was 5.0 ps at 5 Gb/s and 4.5 ps at 10 Gb/s.-
dc.languageEnglish-
dc.publisherIEEK PUBLICATION CENTER-
dc.relation.isPartOfJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.titleAn Adaptive-Bandwidth Referenceless CDR with Small-area Coarse and Fine Frequency Detectors-
dc.typeArticle-
dc.identifier.doi10.5573/JSTS.2015.15.3.404-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.15, no.3, pp.404 - 416-
dc.identifier.wosid000366060900012-
dc.date.tcdate2019-02-01-
dc.citation.endPage416-
dc.citation.number3-
dc.citation.startPage404-
dc.citation.titleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.volume15-
dc.contributor.affiliatedAuthorKim, B-
dc.contributor.affiliatedAuthorSim, JY-
dc.contributor.affiliatedAuthorPark, HJ-
dc.identifier.scopusid2-s2.0-84936776843-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc3-
dc.description.scptc3*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusDATA RECOVERY CIRCUIT-
dc.subject.keywordPlusCLOCK-
dc.subject.keywordPlusACQUISITION-
dc.subject.keywordPlusTRANSCEIVER-
dc.subject.keywordAuthorClock and data recovery circuit-
dc.subject.keywordAuthorfine frequency detection-
dc.subject.keywordAuthorjitter tolerance-
dc.subject.keywordAuthorreferenceless-
dc.subject.keywordAuthoradaptive bandwidth-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-

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김병섭KIM, BYUNGSUB
Dept of Electrical Enginrg
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