DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, M | - |
dc.contributor.author | Han, N | - |
dc.contributor.author | Jung, E | - |
dc.contributor.author | Ryu, BD | - |
dc.contributor.author | Ko, KB | - |
dc.contributor.author | Cuong, TV | - |
dc.contributor.author | Kim, H | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Hong, CH | - |
dc.date.accessioned | 2017-07-19T12:59:17Z | - |
dc.date.available | 2017-07-19T12:59:17Z | - |
dc.date.created | 2017-01-04 | - |
dc.date.issued | 2016-08 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/36732 | - |
dc.description.abstract | This article reports on the development of a reduced graphene oxide (rGO)-embedded light-emitting diode (LED) on a patterned sapphire substrate (PSS), for improving heat dissipation and reducing threading dislocations. The prototype device fabrication involves the generation of scalable curved graphene oxide microscale patterns on a PSS, followed by thermal reduction and epitaxial lateral overgrowth of GaN in a metal-organic chemical vapor deposition system with a one-step process. Using the forward voltage method, the junction temperature T-j of the rGO-embedded LED was found to be reduced by about 17 degrees C from the similar to 62 degrees C of the LED grown without the rGO buffer layer. Temperature-dependent light output power and chip surface temperature measurements were also performed and the results are discussed. | - |
dc.language | English | - |
dc.publisher | IOP Publishing | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.title | Effect of curved graphene oxide in a GaN light-emitting-diode for improving heat dissipation with a patterned sapphire substrate | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/0268-1242/31/8/085010 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.8, pp.85010 | - |
dc.identifier.wosid | 000380223200018 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 85010 | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 31 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-84979574681 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 2 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | graphene oxide | - |
dc.subject.keywordAuthor | light-emitting diodes | - |
dc.subject.keywordAuthor | patterned sapphire substrate | - |
dc.subject.keywordAuthor | heat dissipation | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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