Enhancement in the figure of merit of p-type Bi100−xSbx alloys through multiple valence-band doping
SCIE
SCOPUS
- Title
- Enhancement in the figure of merit of p-type Bi100−xSbx alloys through multiple valence-band doping
- Authors
- Jin, HY; Jaworski, CM; Heremans, JP
- Date Issued
- 2012-07-30
- Publisher
- AIP Publishing
- Abstract
- N-type Bi100-xSbx alloys have the highest thermoelectric figure of merit (zT) of all materials below 200 K; here, we investigate how filling multiple valence band pockets at the T and H-points of the Brillouin zone produces high zT's in p-type Sn-doped material. This approach, theoretically predicted to potentially give zT > 1 in Bi, was used in PbTe. We report thermopower, electrical and thermal conductivity (2 to 400 K) measurements of single crystals with 12 <= x <= 37 and polycrystals (x = 50-90), higher Sb concentrations than previous studies. We obtain a 60% improvement in zT to 0.13. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4740262]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36767
- DOI
- 10.1063/1.4740262
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 101, no. 5, page. 53904, 2012-07-30
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