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Cited 9 time in webofscience Cited 11 time in scopus
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dc.contributor.authorSoo-Min Lee-
dc.contributor.authorJi-Hoon Lim-
dc.contributor.authorIl-Min Yi-
dc.contributor.authorYoung-Jae Jang-
dc.contributor.authorJung, HK-
dc.contributor.authorKyunghoon Kim-
dc.contributor.authorDaehan Kwon-
dc.contributor.authorKim, B-
dc.contributor.authorSim, JY-
dc.contributor.authorPark, HJ-
dc.date.accessioned2017-07-19T13:31:00Z-
dc.date.available2017-07-19T13:31:00Z-
dc.date.created2017-02-13-
dc.date.issued2016-08-
dc.identifier.issn0018-9200-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/37137-
dc.description.abstractA four-bit four-wire four-level (4B4W4L) single-ended parallel transceiver for the point-to-point DRAM interface achieved a peak reduction of similar to 10 dB in the electromagnetic interference (EMI) H-field power, compared to a conventional 4-bit parallel binary transceiver with the same output driver power of transmitter (TX) and the same input voltage margin of receiver (RX). A four-level balanced coding is used in this work to minimize the simultaneous switching noise at TX, to utilize a differential sensing without a reference voltage at RX, to maintain the pin efficiency of 100%, and also to reduce EMI by setting the sum of currents through the four wires to be zero. A capacitive pre-emphasis scheme modified for four-level signaling is also used at TX to compensate for inter-symbol interference. The transmitted four-level signals are recovered by six differential comparators with an offset compensation and a decoder at RX. The proposed transceiver chip fabricated in a 65 nm CMOS process consumes 2.39 pJ/bit with a 1.2 V supply and a 2 inch FR4 channel at 8 Gb/s.-
dc.languageEnglish-
dc.publisherIEEE-
dc.relation.isPartOfIEEE Journal of Solid-State Circuits-
dc.titleA Single-Ended Parallel Transceiver With Four-Bit Four-Wire Four-Level Balanced Coding for the Point-to-Point DRAM Interface-
dc.typeArticle-
dc.identifier.doi10.1109/JSSC.2016.2559512-
dc.type.rimsART-
dc.identifier.bibliographicCitationIEEE Journal of Solid-State Circuits, v.51, no.8, pp.1890 - 1901-
dc.identifier.wosid000382169400014-
dc.date.tcdate2019-02-01-
dc.citation.endPage1901-
dc.citation.number8-
dc.citation.startPage1890-
dc.citation.titleIEEE Journal of Solid-State Circuits-
dc.citation.volume51-
dc.contributor.affiliatedAuthorKim, B-
dc.contributor.affiliatedAuthorSim, JY-
dc.contributor.affiliatedAuthorPark, HJ-
dc.identifier.scopusid2-s2.0-84971382105-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc2-
dc.description.scptc2*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordAuthorBalanced coding-
dc.subject.keywordAuthorDRAM interface-
dc.subject.keywordAuthorelectromagnetic interference (EMI)-
dc.subject.keywordAuthorH-field measurement-
dc.subject.keywordAuthorparallel links-
dc.subject.keywordAuthorsingle-ended-
dc.subject.keywordAuthortransceiver-
dc.subject.keywordAuthor4-bit 4-wire 4-level signaling-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-

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김병섭KIM, BYUNGSUB
Dept of Electrical Enginrg
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