DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwak, C.-M | - |
dc.contributor.author | Seol, J.-B | - |
dc.contributor.author | Kim, Y.-T | - |
dc.contributor.author | Park, C.-G. | - |
dc.date.accessioned | 2017-07-19T13:47:38Z | - |
dc.date.available | 2017-07-19T13:47:38Z | - |
dc.date.created | 2017-02-27 | - |
dc.date.issued | 2017-02 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/37604 | - |
dc.description.abstract | For the past 10 years, laser-assisted atom probe tomography (APT) analysis has been performed to quantify the near-atomic scale distribution of elements and their local chemical compositions within interfaces that determine the design, processing, and properties of virtually all materials. However, the nature of the occurring laser-induced emission at the surface of needle-shaped sample is highly complex and it has been an ongoing challenge to understand the surface-related interactions between laser-sources and tips containing non-conductive oxides for a robust and reliable analysis of multiple-stacked devices. Here, we find that the APT analysis of four paired poly-Si/SiO2 (conductive/non-conductive) multiple stacks with each thickness of 10 nm is governed by experimentally monitoring three experimental conditions, such as laser-beam energies ranged from 30 to 200 nJ, analysis temperatures varying with 30-100 K, and the inclination of aligned interfaces within a given tip toward analysis direction. Varying with laser-energy and analysis temperature, a drastic compositional ratio of doubly charged Si ions to single charged Si ions within conductive poly-Si layers is modified, as compared with ones detected in the non-conductive layers. Severe distorted APT images of multiple stacks are also inevitable, especially at the conductive layers, and leading to a lowering of the successful analysis yields. This lower throughput has been overcome though changing the inclination of interfaces within a given tip to analysis direction (planar interfaces parallel to the tip axis), but significant deviations in chemical compositions of a conductive layer counted from those of tips containing planar interfaces perpendicular to the tip axis are unavoidable owing to the Si-2, SiH2O, and S(i)2O ions detected, for the first time, within poly-Si layers. (C) 2016 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER | - |
dc.relation.isPartOf | Applied Surface Science | - |
dc.title | Laser-assisted atom probe tomography of four paired poly-Si/SiO2 multiple-stacks with each thickness of 10 nm | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/J.APSUSC.2016.10.182 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Applied Surface Science, v.396 | - |
dc.identifier.wosid | 000396223500060 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.title | Applied Surface Science | - |
dc.citation.volume | 396 | - |
dc.contributor.affiliatedAuthor | Park, C.-G. | - |
dc.identifier.scopusid | 2-s2.0-85006175070 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 2 | - |
dc.type.docType | ARTICLE | - |
dc.subject.keywordPlus | FIELD EVAPORATION BEHAVIOR | - |
dc.subject.keywordPlus | LOCAL MAGNIFICATION | - |
dc.subject.keywordPlus | TRIP STEELS | - |
dc.subject.keywordPlus | MICROELECTRONICS | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SHAPE | - |
dc.subject.keywordAuthor | Laser-assisted atom probe | - |
dc.subject.keywordAuthor | Multilayers | - |
dc.subject.keywordAuthor | Silicon oxide | - |
dc.subject.keywordAuthor | Specimen failure | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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