DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yong Jin Jeong | - |
dc.contributor.author | Dong-Jin Yun | - |
dc.contributor.author | Sooji Nam | - |
dc.contributor.author | Eui Hyun Suh | - |
dc.contributor.author | Park, CE | - |
dc.contributor.author | Tae Kyu An | - |
dc.contributor.author | Jaeyoung Jang | - |
dc.date.accessioned | 2017-07-19T13:48:36Z | - |
dc.date.available | 2017-07-19T13:48:36Z | - |
dc.date.created | 2017-02-27 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/37643 | - |
dc.description.abstract | Solution-processed dielectric materials with a high dielectric constant (k) have attracted considerable attention due to their potential applications in low-voltage-operating organic field-effect transistors (OFETs) for realizing large-area and low-power electronic devices. In terms of device commercialization, the patterning of each film component via a facile route is an important issue. In this study, we introduce a photo-patternable precursor, zirconium acrylate (ZrA), to fabricate photo-patterned high-k zirconium oxide (ZrOx) dielectric layers with UV light. Solution-processed ZrA films were effectively micro-patterned with UV exposure and developing, and transitioned to ZrOx through a sol-gel reaction during deep-UV annealing. The UV-assisted and similar to 10 nm-thick ZrOx dielectric films exhibited a high capacitance (917.13 nF/cm(2) at 1 KHz) and low leakage current density (10(-7) A/cm(2) at 1.94 MV/cm). Those films could be utilized as gate dielectric layers of OFETs after surface modification with ultrathin cyclic olefin copolymer layers. Finally, we successfully fabricated organic complementary inverters exhibiting hysteresis-free operation and high voltage gains of over 42 at low voltages of <= 3 V. (C) 2016 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Elsevier | - |
dc.relation.isPartOf | Organic Electronics | - |
dc.title | Photo-patternable high-k ZrOx dielectrics prepared using zirconium acrylate for low-voltage-operating organic complementary inverters | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/J.ORGEL.2016.03.005 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Organic Electronics, v.33, pp.40 - 47 | - |
dc.identifier.wosid | 000375111700006 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 47 | - |
dc.citation.startPage | 40 | - |
dc.citation.title | Organic Electronics | - |
dc.citation.volume | 33 | - |
dc.contributor.affiliatedAuthor | Park, CE | - |
dc.identifier.scopusid | 2-s2.0-84960919492 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 8 | - |
dc.description.scptc | 7 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | BILAYER GATE-DIELECTRICS | - |
dc.subject.keywordPlus | OXIDE DIELECTRICS | - |
dc.subject.keywordPlus | PHOTOCHEMICAL ACTIVATION | - |
dc.subject.keywordPlus | COLLOIDAL NANOCRYSTALS | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | ZINC ACRYLATE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordAuthor | Organic field-effect transistors (OFETs) | - |
dc.subject.keywordAuthor | Zirconium oxide | - |
dc.subject.keywordAuthor | Zirconium acrylate | - |
dc.subject.keywordAuthor | Complementary inverters | - |
dc.subject.keywordAuthor | Low voltages | - |
dc.subject.keywordAuthor | Solution processes | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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