DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, K | - |
dc.contributor.author | Cha, E | - |
dc.contributor.author | Park, J | - |
dc.contributor.author | Gi, S | - |
dc.contributor.author | Chu, M | - |
dc.contributor.author | Baek, K | - |
dc.contributor.author | Lee, B | - |
dc.contributor.author | Oh, SH | - |
dc.contributor.author | Hwang, H | - |
dc.date.accessioned | 2017-07-19T13:49:53Z | - |
dc.date.available | 2017-07-19T13:49:53Z | - |
dc.date.created | 2017-02-27 | - |
dc.date.issued | 2016-08 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/37685 | - |
dc.description.abstract | This letter presents an investigation of analog synapse characteristics of a PCMO-based interface switching device with varying electrode materials. In comparison with the filamentary switching device having only 1-b storage and variability issues, the interface switching devices exhibit excellent electrical properties, such as 5-b (32-level) multi-level cell characteristics, wafer-scale switching uniformity, and scalability of the switching energy with device area. To improve data retention of the interface switching device, we propose a Mo electrode to increase the oxidation barrier height (similar to 0.4 eV) that, in turn, significantly improves the retention time and pattern classification accuracy of neural networks. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | IEEE Electron Device Letters | - |
dc.title | Analog Synapse Device With 5-b MLC and Improved Data Retention for Neuromorphic System | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2016.2583545 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.37, no.8, pp.1067 - 1070 | - |
dc.identifier.wosid | 000380330000031 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 1070 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1067 | - |
dc.citation.title | IEEE Electron Device Letters | - |
dc.citation.volume | 37 | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84980317055 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 7 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | RRAM | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | synapse device | - |
dc.subject.keywordAuthor | PCMO | - |
dc.subject.keywordAuthor | analog memory | - |
dc.subject.keywordAuthor | neuromorphic | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
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