Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device

Abstract

In this letter, we demonstrate a steep slope fieldeffect transistor (FET) using a threshold switching (TS) device. The Ag/TiO2-based TS device reported in our previous work was implemented in series with the drain region of a transistor. Since the TS device has an abrupt transition between the OFF- and ON-states and vice versa, the transistor has a 5-mV/decade subthreshold slope and a high ON/OFF-current ratio (I-ON/I-OFF) of >10(7) with a low drain voltage (0.3 V). Furthermore, the threshold voltage (V-th,V- FET) of the transistor can be tuned by controlling the thickness of the TS device.