Article
Cited 0 time in 
Cited 56 time in 
Cited 56 time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Prakash A. | - |
| dc.contributor.author | Hyunsang Hwang | - |
| dc.date.accessioned | 2017-07-19T13:50:04Z | - |
| dc.date.available | 2017-07-19T13:50:04Z | - |
| dc.date.created | 2017-02-27 | - |
| dc.date.issued | 2016-06 | - |
| dc.identifier.issn | 2365-6581 | - |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/37692 | - |
| dc.description.abstract | Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive in achieving high-density and low-cost memory and will be required in future. In this chapter, MLC storage and resistance variability and reliability of multilevel in ReRAM are discussed. Different MLC operation schemes with their physical mechanisms and a comprehensive analysis of resistance variability have been provided. Various factors that can induce variability and their effect on the resistance margin between the multiple resistance levels are assessed. The reliability characteristics and the impact on MLC storage have also been assessed. ? 2016 by Walter de Gruyter Berlin/Boston 2016. | - |
| dc.language | English | - |
| dc.publisher | de gruyter | - |
| dc.relation.isPartOf | Physical Sciences Reviews | - |
| dc.title | Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1515/psr-2016-0010 | - |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | Physical Sciences Reviews, v.1, no.6 | - |
| dc.citation.number | 6 | - |
| dc.citation.title | Physical Sciences Reviews | - |
| dc.citation.volume | 1 | - |
| dc.contributor.affiliatedAuthor | Hyunsang Hwang | - |
| dc.identifier.scopusid | 2-s2.0-85060068052 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.type.docType | Article | - |
| dc.subject.keywordAuthor | conductive filament | - |
| dc.subject.keywordAuthor | Emerging memory | - |
| dc.subject.keywordAuthor | high density | - |
| dc.subject.keywordAuthor | memory margin | - |
| dc.subject.keywordAuthor | MLC reliability | - |
| dc.subject.keywordAuthor | multilevel cell storage (MLC) | - |
| dc.subject.keywordAuthor | non-volatile storage | - |
| dc.subject.keywordAuthor | resistive random access memory (ReRAM) | - |
| dc.subject.keywordAuthor | storage | - |
| dc.subject.keywordAuthor | variability | - |
| dc.description.journalRegisteredClass | scopus | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg