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Cited 58 time in webofscience Cited 63 time in scopus
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dc.contributor.authorKim, HH-
dc.contributor.authorKang, B-
dc.contributor.authorSuk, JW-
dc.contributor.authorLi, N-
dc.contributor.authorKim, KS-
dc.contributor.authorRuoff, RS-
dc.contributor.authorLee, WH-
dc.contributor.authorCho, K-
dc.date.accessioned2017-07-19T13:54:28Z-
dc.date.available2017-07-19T13:54:28Z-
dc.date.created2017-02-28-
dc.date.issued2015-05-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/37848-
dc.description.abstractPentacene (C22H14), a polycyclic aromatic hydrocarbon, was used as both supporting and sacrificing layers for the clean and doping-free graphene transfer. After successful transfer of graphene to a target substrate, the pentacene layer was physically removed from the graphene surface by using intercalating organic solvent. This solvent-mediated removal of pentacene from graphene surface was investigated by both theoretical calculation and experimental studies with various solvents. The uses of pentacene and appropriate intercalation solvent enabled graphene transfer without forming a residue from the supporting layer. Such residues tend to cause charged impurity scattering and unintentional graphene doping effects. As a result, this clean graphene exhibited extremely homogeneous surface potential profiles over a large area. A field-effect transistor fabricated using this graphene displayed a high hole (electron) mobility of 8050 cm(2)N.s (9940 cm(2)N.s) with a nearly zero Dirac point voltage.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.relation.isPartOfACS NANO-
dc.titleClean Transfer of Wafer-Scale Graphene via Liquid Phase Removal of Polycyclic Aromatic Hydrocarbons-
dc.typeArticle-
dc.identifier.doi10.1021/NN5066556-
dc.type.rimsART-
dc.identifier.bibliographicCitationACS NANO, v.9, no.5, pp.4726 - 4733-
dc.identifier.wosid000355383000009-
dc.date.tcdate2019-02-01-
dc.citation.endPage4733-
dc.citation.number5-
dc.citation.startPage4726-
dc.citation.titleACS NANO-
dc.citation.volume9-
dc.contributor.affiliatedAuthorCho, K-
dc.identifier.scopusid2-s2.0-84930671993-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc22-
dc.description.scptc17*
dc.date.scptcdate2018-05-121*
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusSELF-ASSEMBLED MONOLAYERS-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusELECTRODES-
dc.subject.keywordPlusEXFOLIATION-
dc.subject.keywordPlusSCATTERING-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusLEVEL-
dc.subject.keywordPlusSIO2-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthorpentacene-
dc.subject.keywordAuthorchemical vapor deposition-
dc.subject.keywordAuthortransfer-
dc.subject.keywordAuthorgraphene transistors-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-

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조길원CHO, KIL WON
Dept. of Chemical Enginrg
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