DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, YH | - |
dc.contributor.author | Seok, S | - |
dc.contributor.author | Lee, TK | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Kim, BK | - |
dc.contributor.author | Kim, O | - |
dc.date.accessioned | 2017-07-19T13:56:03Z | - |
dc.date.available | 2017-07-19T13:56:03Z | - |
dc.date.created | 2017-02-28 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 1551-319X | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/37884 | - |
dc.description.abstract | We investigated the effects of rising edge during positive unipolar dynamic stress and bipolar dynamic stress under darkness and illumination with duty ratio D of dynamic stress from 1 to 50%. Threshold voltage shift Delta V-th increased with effective time t(eff) as the product of stress duration and D. Delta V-th was higher during bipolar stress than during positive unipolar stress and under low D than at high D. Degradation of amorphous InGaZnO thin film transistor is related to the number and amplitude of rising edges. We suggest that an additional degradation under dynamic stress is originated from high electric field in channel region at rising edge. | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.relation.isPartOf | Journal of DisplayTecjnology | - |
dc.title | Effect of Rising Edge during Dynamic Stress With Duty Ratio in Amorphous InGaZnO Thin Film Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/JDT.2016.2590566 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Journal of DisplayTecjnology, v.12, no.10, pp.1078 - 1082 | - |
dc.identifier.wosid | 000384300400014 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 1082 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1078 | - |
dc.citation.title | Journal of DisplayTecjnology | - |
dc.citation.volume | 12 | - |
dc.contributor.affiliatedAuthor | Kim, O | - |
dc.identifier.scopusid | 2-s2.0-84991510605 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 3 | * |
dc.date.scptcdate | 2018-05-121 | * |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Degradation | - |
dc.subject.keywordAuthor | duty ratio | - |
dc.subject.keywordAuthor | dynamic stress | - |
dc.subject.keywordAuthor | instability | - |
dc.subject.keywordAuthor | oxide semiconductors | - |
dc.subject.keywordAuthor | reliability | - |
dc.subject.keywordAuthor | rising edge and thin-film transistor (TFT) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
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