Highly scalable resistive switching memory cells using pore-size-controlled nanoporous alumina templates

Abstract

Nanoscale resistive switching memory cells with controlled cell sizes in the range of 25 to 90 nm were successfully fabricated using anodized aluminum oxide templates, and their electrical properties were directly measured using a conductive atomic force microscope. The size of the memory cells was systematically controlled by controlling the pore size of the nanoscale masks. The devices exhibited controllable and reliable resistive switching characteristics suitable for programmable memory applications. The reported approach provides new opportunities for the preparation of nanostructured nonvolatile memory devices with continued device scaling.