Microstructure and high-temperature strength of silicon carbide with 2000 ppm yttria
SCIE
SCOPUS
- Title
- Microstructure and high-temperature strength of silicon carbide with 2000 ppm yttria
- Authors
- Y. -W. Kim; S. H. Jang; T. Nishimura; CHOI, SI YOUNG; S. D. Kim
- Date Issued
- 2017-12
- Publisher
- ELSEVIER SCI LTD
- Abstract
- A dense silicon carbide (SiC) ceramic with a very high flexural strength at 2000 degrees C (981 +/- 128 MPa) was obtained by conventional hot-pressing with extremely low additive content (2000 ppm Y2O3). Observations using high-resolution transmission electron microscopy (HRTEM) showed that (1) homophase (SiC/SiC) boundaries were clean without an intergranular glassy phase and (2) junction pockets consisted of nanocrystalline Y-containing phase embedded in an amorphous Y-Si-O-C-N phase. The excellent strength at 2000 degrees C was attributed to the clean SiC/SiC boundary and the strengthening effect of plastic deformation. (C) 2017 Elsevier Ltd. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/38950
- DOI
- 10.1016/j.jeurceramsoc.2017.07.002
- ISSN
- 0955-2219
- Article Type
- Article
- Citation
- JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, vol. 37, no. 15, page. 4449 - 4455, 2017-12
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