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Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators SCIE SCOPUS

Title
Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators
Authors
JHI, SEUNG HOONKim, JeongwooMacDonald, A. HWu, Ruqian
Date Issued
2017-10
Publisher
AMER PHYSICAL SOC
Abstract
We investigate magnetic ordering and the quantum anomalous Hall effect (QAHE) in Cr-doped topological insulators using systematic first-principles calculations, explaining the mechanism responsible for ferromagnetic order and the reason why Sb2Te3 is a better QAHE host than Bi2Se3 or Bi2Te3. We conclude that these magnetic topological insulators have relatively long-range exchange interactions within quintuple layers and weak interactions between quintuple layers. Our analyses for the spin splitting of the topological surface states suggest that the temperature at which the QAHE occurs in these materials can be enhanced significantly by Mo-Cr co-doping.
URI
https://oasis.postech.ac.kr/handle/2014.oak/38983
DOI
10.1103/PhysRevB.96.140410
ISSN
2469-9950
Article Type
Article
Citation
PHYSICAL REVIEW B, vol. 96, no. 14, 2017-10
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