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Cited 66 time in webofscience Cited 73 time in scopus
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dc.contributor.authorRAEISHOSSEINI, NILOUFAR-
dc.contributor.authorLEE, JANG SIK-
dc.date.accessioned2018-01-04T06:43:25Z-
dc.date.available2018-01-04T06:43:25Z-
dc.date.created2017-12-06-
dc.date.issued2017-09-
dc.identifier.issn1385-3449-
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/39013-
dc.description.abstractResistive switching memory (ReRAM) is emerging as a developed technology for a new generation of non-volatile memory devices. Natural organic biomaterials are potential elements of environmentally-benign, biocompatible, and biodegradable electronic devices for information storage and resorbable medical implants. Here, we highlight progress in exploiting biomaterials to fabricate a special category of bio-nanoelectronic memories called biodegradable resistive random access memory (bio-ReRAM). Bio-ReRAMs are beneficial because they are non-toxic and environmentally benign. Various types of biomaterials with their chemical compound, bio-ReRAM device design and structure, their relevance resistive switching (RS) behavior, and conduction mechanism are considered in detail. Particularly, we report physically-transient devices, their corresponding switching mechanism, and their dissolution by immersion in water. Finally, we review recent progress in the development of various types of flexible bio-ReRAMs, focusing on their flexibility and reliability as bendable nanoelectronics. Because most of these devices are candidates to become wearable, skin-compatible, and even digestible smart electronics, we discuss the future improvement of natural materials and the perspective of novel bio-ReRAMs.-
dc.languageEnglish-
dc.publisherSPRINGER-
dc.relation.isPartOfJOURNAL OF ELECTROCERAMICS-
dc.titleResistive switching memory using biomaterials-
dc.typeArticle-
dc.identifier.doi10.1007/s10832-017-0104-z-
dc.type.rimsART-
dc.identifier.bibliographicCitationJOURNAL OF ELECTROCERAMICS, v.39, no.1-4, pp.223 - 238-
dc.identifier.wosid000419361600016-
dc.date.tcdate2019-02-01-
dc.citation.endPage238-
dc.citation.number1-4-
dc.citation.startPage223-
dc.citation.titleJOURNAL OF ELECTROCERAMICS-
dc.citation.volume39-
dc.contributor.affiliatedAuthorRAEISHOSSEINI, NILOUFAR-
dc.contributor.affiliatedAuthorLEE, JANG SIK-
dc.identifier.scopusid2-s2.0-85030167903-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc6-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusNONVOLATILE MEMORY-
dc.subject.keywordPlusSILK FIBROIN-
dc.subject.keywordPlusBIO-MEMRISTOR-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusPROTEIN-
dc.subject.keywordPlusSTARCH-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusCHITOSAN-
dc.subject.keywordAuthorSwitching mechanism-
dc.subject.keywordAuthorBiomaterials-
dc.subject.keywordAuthorResistance change-
dc.subject.keywordAuthorBiodegradable-
dc.subject.keywordAuthorBiocompatible-
dc.relation.journalWebOfScienceCategoryMaterials Science, Ceramics-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-

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이장식LEE, JANG SIK
Dept of Materials Science & Enginrg
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