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Electron-lattice coupling in correlated materials of low electron occupancy SCIE SCOPUS

Title
Electron-lattice coupling in correlated materials of low electron occupancy
Authors
K. EomE. ChoiJ. YoonM. ChoiK. SongCHOI, SI YOUNGLEE, DAESUJ. -W. LeeC. -B EomJ. Lee
Date Issued
2017-09
Publisher
AMER CHEMICAL SOC
Abstract
In correlated materials including transition metal oxides, electronic properties and functionalities are modulated and enriched by couplings between the electron and lattice degrees of freedom. These couplings are controlled by external parameters such as chemical doping, pressure, magnetic and electric fields, and light irradiation. However, the electron-lattice coupling relies on orbital characters, i.e., symmetry and occupancy, of t(2g) and e(g) orbitals, so that a large electron-lattice coupling is limited to eg electron system, whereas t(2g) electron system exhibits an inherently weak coupling. Here, we design and demonstrate a strongly enhanced electron-lattice coupling in electron-doped SrTiO3, that is, the t(2g) electron system. In ultrathin films of electron-doped SrTiO3 [i.e., (La0.25Sr0.75)TiO3], we reveal the strong electron-lattice-orbital coupling, which is manifested by extremely increased tetragonality and the corresponding metal-to-insulator transition. Our findings open the way of an active tuning of the charge-lattice-orbital coupling to obtain new functionalities relevant to emerging nanoelectronic devices.
URI
https://oasis.postech.ac.kr/handle/2014.oak/39037
DOI
10.1021/acs.nanolett.7b02109
ISSN
1530-6984
Article Type
Article
Citation
NANO LETTERS, vol. 17, no. 9, page. 5458 - 5463, 2017-09
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