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Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application SCIE SCOPUS
- Title
- Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application
- Authors
- HWANG, HYUNSANG; Yunmo Koo; Sangmin Lee; Seonggeon Park; Minkyu Yang
- Date Issued
- 2017-05
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- In this letter, simple binary Ovonic threshold switching (OTS) material with outstanding selector device performance has been demonstrated. Even with its simple material composition and easy fabrication process, the selector device with the binary OTS material showed excellent selector performance such as high-OFF resistance (> 1 G Omega at 0.1 V), low-ON resistance (< 1 k Omega at 2.0 V), extremely sharp switching slope (< 1 mV/dec), fast operating speed (t(transition) < 2 ns, t(delay) < 7 ns), high endurance (> 10 8 cyclesof 150 ns pulse), high electrical stability (> 1ks at 1.2 V), and high thermal stability (> 400 degrees C /30 min). Furthermore, conduction mechanism of the OTS has been explained by Poole-Frenkel-based analytical modeling.
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 38, no. 5, page. 568 - 571, 2017-05
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