Doping-induced bandgap tuning of α-Ga2O3 for ultraviolet lighting
SCIE
SCOPUS
KCI
- Title
- Doping-induced bandgap tuning of α-Ga2O3 for ultraviolet lighting
- Authors
- Minseok Choi; SON, JUNWOO
- Date Issued
- 2017-02
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We propose the novel strategy for indirect-to-direct band gap transition of gallium oxide-based semiconductors for ultraviolet lighting device through first-principles calculations using a screened hybrid functional. Our calculations show that the tuning of electronic band gap of α-Ga2O3 is straightforward by adding dopants, which mimics alloy-like system. In order to put the band gap in the energy range of ultraviolet light, Group-III (In, Tl) at the Ga site and Group-V (N, P) or Group-VI (S, Se) at the O site are examined. We find that the most of doped Ga2O3 possess direct or nearly direct band gaps lying in the ultraviolet energy that is essential for optoelectronic devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/39193
- DOI
- 10.1016/j.cap.2017.02.019
- ISSN
- 1567-1739
- Article Type
- Article
- Citation
- CURRENT APPLIED PHYSICS, vol. 17, no. 5, page. 713 - 716, 2017-02
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