REDUCTION OF OHMIC CONTACT RESISTIVITY ON P-TYPE GAN BY SURFACE TREATMENT
SCIE
SCOPUS
- Title
- REDUCTION OF OHMIC CONTACT RESISTIVITY ON P-TYPE GAN BY SURFACE TREATMENT
- Authors
- Jong Kyu Kim, Ho Won Jang; Changmin Jeon; Jong-Lam Lee
- Date Issued
- 2001-11
- Publisher
- ELSEVIER SCIENCE
- Abstract
- The pre-treatment of p-type GaN surface using boiling aqua regia was effective in reducing oxygen and carbon, which plays a critical role in decreasing contact resistivity of Pt contact on p-type GaN. The treatment caused the shift of the surface Fermi level of p-type GaN and subsequent to the reduction of band bending below the contact. The results suggest that the pre-treatment plays a role in removing the surface oxides, leading to the reduction of barrier height for the transport of holes at the interface of metal with p-type GaN. (C) 2001 Elsevier Science B.V. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/39735
- DOI
- 10.1016/S1567-1739(01)00040-2
- ISSN
- 1567-1739
- Article Type
- Article
- Citation
- CURRENT APPLIED PHYSICS, vol. 1, no. 4-5, page. 385 - 388, 2001-11
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