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Article
Interpretation of transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor by capacitance deep level transient spectroscopySCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 33, page. S366 - S369, 1998-11

Article
Fabrication of self-assembled quantum dots in lattice-matched GaAs/AlGaAs systemSCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 33, page. S262 - S265, 1998-11

Article
The effect of silicon addition on the mechanical alloying of FeB powderSCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 35, page. S236 - S240, 1999-07

Article
The effectiveness of a thin refractory metal layer inserted into a Ta film by ion-assisted deposition as a diffusion barrier between copper and siliconSCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 35, page. S349 - S352, 1999-07

Article
RF characteristics of GaAs power MESFET's with superlattice buffer layerSCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 30, page. S117 - S122, 1997-06

Article
Pt ohmic contact to p-type GaN with contact resistivity of 10(-4) Omega center dot cm(2) using surface treatmentSCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 35, page. S1063 - S1066, 1999-12

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