Direct Deposition of Highly Conductive Aluminum Thin Film on Substrate by Solution-Dipping Process

Abstract

A solution dipping process consisting of 2 steps, including (i) a catalytic treatment of the substrate and (ii) an immersion of the catalytically treated substrate into an aluminum precursor solution of AlH3{O(C4H9)(2)}, is suggested for the low-cost and simple preparation of aluminum thin film. This process can be applied to electric devices in the way of not only various film geometry including large area (square 100 mm (W) X 100 mm (L)) or patterned structure but also the diverse substrate selectivity including rigid or flexible substrate. More interestingly, preparations of aluminum film in this study can be unprecedentedly accomplished at room temperature with the help of chemical catalyst to decompose AlH3{O(C4H9)(2)} into Al, 1.5H(2), and O(C4H9)(2). Beyond the previously reported processes, the prepared Al films via solution dipping process are comparable or even superior to Ag, Au, and Al films prepared by other solution processes and furthermore are found to be excellent in mechanical durability against external deformation.