DC Field | Value | Language |
---|---|---|
dc.contributor.author | Giyoun Roh | - |
dc.contributor.author | KIM, HYEOK JIN | - |
dc.contributor.author | Cheolgyu Kim | - |
dc.contributor.author | Dongwoo Kim | - |
dc.contributor.author | KANG, BONG KOO | - |
dc.date.accessioned | 2018-05-04T02:36:14Z | - |
dc.date.available | 2018-05-04T02:36:14Z | - |
dc.date.created | 2018-02-26 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/41245 | - |
dc.description.abstract | This paper proposes a fast and accurate method to measure the constants a and n of the power law Delta V-th = at(n) for HfSiON/SiO2 dielectric nMOSFETs under positive bias temperature instability (PBTI), where Delta V-th is a shift of threshold voltage, and t is stress duration. The proposed method requires one nMOSFET only, uses a voltage ramp stress (VRS),measures Delta V-th vs. t data during VRS, uses a regression method to fit the data for each VRS pulse to the power law to obtain a and n at each stress voltage V-g,V-str,,then obtains five voltage-independent constants for the power law after fitting the curves of a and n vs. V-g,V-str to empirical models. The five voltage-independent constants agreed very well with those obtained using the constant voltage stress (CVS) method. After obtaining the voltage-independent constants, the lifetime t(L) at an operating voltage V-op was estimated using the power law. The estimated t(L) = 1.67 x 10(8) s was quite close to t(L) = 1.74 x 10(8) s estimated using CVS, and to t(L) = 1.72 x 10(8) s estimated by extrapolating the Delta V-th vs. t curve measured at V-g,V-str = V-op = 1.2 V to Delta V-th = 200 mV. The time required for measurement was 900 s, compared to 30,000 s for the CVS method. These experimental results show that the proposed VRS-regression method is very useful for screening nMOSFETs under PBTI. | - |
dc.language | English | - |
dc.publisher | Elsevier | - |
dc.relation.isPartOf | Miroelectonic Reliabilty | - |
dc.title | Fast and accurate method of lifetime estimation for HfSiON/SiO2 dielectric n-MOSFETs under positive bias temperature instability | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.microrel.2017.03.035 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Miroelectonic Reliabilty, v.72, pp.98 - 102 | - |
dc.identifier.wosid | 000401388000014 | - |
dc.date.tcdate | 2018-03-23 | - |
dc.citation.endPage | 102 | - |
dc.citation.startPage | 98 | - |
dc.citation.title | Miroelectonic Reliabilty | - |
dc.citation.volume | 72 | - |
dc.contributor.affiliatedAuthor | Giyoun Roh | - |
dc.contributor.affiliatedAuthor | KIM, HYEOK JIN | - |
dc.contributor.affiliatedAuthor | KANG, BONG KOO | - |
dc.identifier.scopusid | 2-s2.0-85018449715 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | STACKS | - |
dc.subject.keywordAuthor | High-k dielectrics | - |
dc.subject.keywordAuthor | Positive bias temperature instability (PBTI) | - |
dc.subject.keywordAuthor | Voltage ramp stress (VRS) | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
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