High concentration of nitrogen doped into graphene using N-2 plasma with an aluminum oxide buffer layer
SCIE
SCOPUS
- Title
- High concentration of nitrogen doped into graphene using N-2 plasma with an aluminum oxide buffer layer
- Authors
- PARK, SANG HAN
- Date Issued
- 2014-02
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- We performed plasma doping of nitrogen into single-layer graphene on SiO2. Using aluminum oxide as a buffer layer to reduce the plasma damage, up to 19.7% nitrogen was substitutionally doped into graphene. The nitrogen doping of graphene was confirmed by Raman and X-ray photoemission spectroscopy analyses. The n-doping property of the N-doped graphene was measured by Raman spectroscopy. Raman mapping was carried out to statistically confirm the Dirac cone shift of graphene resulting from the N-doping. The Dirac cone shift was directly measured by ultraviolet photoemission spectroscopy (UPS). The UPS result was consistent with the value calculated from the Raman G peak shift.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/41328
- DOI
- 10.1039/C3TC31773K
- ISSN
- 2050-7526
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS CHEMISTRY C, vol. 2, no. 5, page. 933 - 939, 2014-02
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