DC Field | Value | Language |
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dc.contributor.author | PARK, SANG HAN | - |
dc.date.accessioned | 2018-05-04T02:43:01Z | - |
dc.date.available | 2018-05-04T02:43:01Z | - |
dc.date.created | 2018-02-26 | - |
dc.date.issued | 2013-10-15 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/41330 | - |
dc.description.abstract | The physical and electrical effects caused by interfacial reactions of HfO2 on Si-passivated GaAs were investigated by various methods. The results showed that the Si layer decreases the diffusion and formation of Ga-O. Moreover, post-nitridation in HfO2/Si/GaAs significantly reduced the formation of As-O and Ga-O. The depth profiling data showed that two separated layered structures were formed with HfO2 and a mixture of HfO2 and SiO2 after the annealing process. The crystalline structure and formation of Ga-O in the film affect the band offsets between GaAs and the high-k HfO2 dielectric. Moreover, the Si passivation effectively suppressed the interfacial defects caused by Ga-O diffusion during the annealing treatment. The nitridation cause As diffusion to oxygen vacancy of HfO2 result in the increase of the interfacial defect. (c) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.title | Control of the interfacial reaction in HfO2 on Si-passivated GaAs | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.apsusc.2013.06.118 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.283, pp.375 - 381 | - |
dc.identifier.wosid | 000323601700054 | - |
dc.date.tcdate | 2019-02-01 | - |
dc.citation.endPage | 381 | - |
dc.citation.startPage | 375 | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 283 | - |
dc.contributor.affiliatedAuthor | PARK, SANG HAN | - |
dc.identifier.scopusid | 2-s2.0-84883181197 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 1 | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | HfO2 | - |
dc.subject.keywordAuthor | GaAs | - |
dc.subject.keywordAuthor | Passivation | - |
dc.subject.keywordAuthor | High-k dielectric | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
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