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Article
Novel Digital Driving Method Using Dual Scan for Active Matrix Organic Light-Emitting Diode DisplaysSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 47, no. 11, page. 8275 - 8278, 2008-11

Article
Novel resistance switching devices based on sub-10 nm polymer thin filmSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 47, no. 7, page. 5665 - 5667, 2008-07

Article
Unipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin FilmsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 4, page. 4C169, 2009-04

Article
Unipolar Memory Operation of Resistance Random-Access Memory Using Compliance Current ControllerSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 4, page. 4C161, 2009-04

Article
Effects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect TransistorsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 6, 2009-06

Article
Unipolar Resistance Switching in Polymeric Resistance Random Access MemoriesSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 6, 2009-06

Article
Driving Method Compensating for the Hysteresis of Polycrystalline Silicon Thin-Film Transistors for Active-Matrix Organic Light-Emitting Diode DisplaysSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 5, 2009-05

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