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Article

Effects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect TransistorsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 6, 2009-06

Article

Unipolar Resistance Switching in Polymeric Resistance Random Access MemoriesSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 6, 2009-06

Article

Driving Method Compensating for the Hysteresis of Polycrystalline Silicon Thin-Film Transistors for Active-Matrix Organic Light-Emitting Diode DisplaysSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 48, no. 5, 2009-05

Article

Impact of Spacer Dielectric Constant on Parasitic RC and Design Guidelines to Optimize DC/AC Performance in 10 nm Node Si-Nanowire FETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, page. 4DN08-1 - 4DN08-5, 2015-04

Article

Physical DC and Thermal Noise Models of 18 nm Double-Gate Junctionless pMOSFETs for Low Noise RF ApplicationsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 54, no. 4, page. 4DC08-1 - 4DC08-6, 2015-04

Article

Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETsSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, no. 8, 2016-08

Article

Threshold voltage variation depending on single grain boundary and stored charges in an adjacent cell for vertical silicon-oxide-nitride-oxide-silicon (SONOS) NAND flash memorySCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 57, no. 4S, 2018-04

Article

Electrical characteristics of tunneling field-effect transistors with asymmetric channel thicknessSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 56, no. 2, page. 024201-1 - 024201-5, 2017-01

Article

Degradation process by effect of water molecules during negative bias temperature stress in amorphous-InGaZnO thin-film transistorSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 56, no. 10, 2017-10

Article

Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate Metal-Oxide-Semiconductor Field-Effect TransistorSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 50, no. 6, page. 6GF16, 2011-06

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