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Department of Electrical Engineering (전자전기공학과)
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Article
Characterization of fast relaxation by oxide-trapped charges under BTI stress on 64 nm HfSiON/SiO2 MOSFETs
SCIE
SCOPUS
JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 59, 2020-07
Kim, Hyeokjin
;
Roh, Giyoun
;
Kang, Bongkoo
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2010 - 2020
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2008 - 2009
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