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Department of Chemical Engineering (화학공학과)
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Article
Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping
SCIE
SCOPUS
Advanced Electronic Materials, page. 2201014, 2022-12
Cho, Jae‐Hyeok
;
Go, Ji‐Young
;
Bui, Tan Tan
;
Mun, Seunguk
;
Kim, Yunseok
;
Ahn, Kyunghan
;
Noh, Yong‐Young
;
Kim, Myung‐Gil
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defect passivation
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EFFICIENCY
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INORGANIC PEROVSKITE
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IODIDE
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metal halide perovskites
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MIGRATION
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p-type doping
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thin-film transistor
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