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Browsing "1. Journal Papers" by JournalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
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Showing results 1 to 1 of 1
Article
High Speed, Low Power Programming in 0.17mum Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects
SCIE
SCOPUS
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, vol. 43, no. 2A, page. L224 - L226, 2004-02-01
Baek, CK
;
Song, YH
;
Kim, B
;
Quan, WY
;
Park, YJ
;
et al
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