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Article
Spatial and Temporal Characterization of Programming Charge in SONOS Memory Cell: Effects of Localized Electron TrappingSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, vol. 43, no. 12B, page. L1581 - L1583, 2004-12-15

Article
Simple Experimental Determination of the Spread of Trapped Hot Holes Injected in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Cells: Optimized Erase and Cell ShrinkageSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, vol. 43, no. 12B, page. L1611 - L1613, 2004-12-15

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